attenuators - digital - chip 1 1 - 8 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc424 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz v06.0809 electrical speci cations, t a = +25 c, with vee = -5v & vctl = 0/-5v the hmc424 is ideal for: ? fiber optics & broadband telecom ? microwave radio & vsat ? military radios, radar & ecm ? space applications 0.5 db lsb steps to 31.5 db single control line per bit 0.5 db typical bit error die size: 1.45 x 0.85 x 0.1 mm the hmc424 die is a broadband 6-bit gaas ic digital attenuator mmic chip. covering dc to 13 ghz, the insertion loss is less then 4 db typical. the attenua- tor bit values are 0.5 (lsb), 1, 2, 4, 8, and 16 db for a total attenuation of 31.5 db. attenuation accuracy is excellent at 0.5 db typical step error with an iip3 of +32 dbm. six control voltage inputs, toggled bet- ween 0 and -5v, are used to select each attenuation state. a single vee bias of -5v allows operation at fre- quencies down to dc. parameter frequency (ghz) min. typ. max. units insertion loss dc - 8.0 ghz 8.0 - 13.0 ghz 3.0 4.0 3.8 4.6 db db attenuation range dc - 13.0 ghz 31.5 db return loss (rf1 & rf2, all atten. states) dc - 8.0 ghz 8.0 - 13.0 ghz 8 11 12 15 db db attenuation accuracy: (referenced to insertion loss) 0.5 - 7.5 db states 8 - 31.5 db states dc - 13.0 ghz dc - 13.0 ghz 0.3 + 4% of atten. setting max 0.3 + 6% of atten. setting max db db input power for 0.1 db compression 1.0 - 13.0 ghz 22 dbm input third order intercept point (two-tone input power= 0 dbm each tone) ref state all other states 1.0 - 13.0 ghz 46 32 dbm dbm switching characteristics trise, tfall (10/90% rf) ton/toff (50% ctl to 10/90% rf) dc - 13.0 ghz 30 50 ns ns general description features functional diagram typical applications
attenuators - digital - chip 1 1 - 9 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com return loss rf1, rf2 (only major states are shown) insertion loss normalized attenuation (only major states are shown) bit error vs. frequency (only major states are shown) relative phase vs. frequency (only major states are shown) bit error vs. attenuation state -10 -8 -6 -4 -2 0 03691215 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 03691215 0.5 db 1 db 2 db 4 db 8 db 16 db 31.5 db return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 03691215 0.5 db 1 db 2 db 4 db 8 db 16 db 31.5 db normalized attenuation (db) frequency (ghz) -2 -1 0 1 2 0 4 8 12 16 20 24 28 32 0.1 ghz 4 ghz 8 ghz 13 ghz bit error (db) attenuation state (db) -2 -1 0 1 2 03691215 0.5 db 1 db 2 db 4 db 8 db 16 db 31.5 db bit error (db) frequency (ghz) -20 0 20 40 60 80 100 03691215 0.5 db 1 db 2 db 4 db 8 db 16 db 31.5 db relative phase (deg) frequency (ghz) hmc424 v06.0809 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz
attenuators - digital - chip 1 1 - 10 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table control voltage bias voltage & current worst case step error between successive attenuation states absolute maximum ratings control voltage input attenuation state rf1 - rf2 v1 16 db v2 8 db v3 4 db v4 2 db v5 1 db v6 0.5 db low low low low low low reference i.l. low low low low low high 0.5 db low low low low high low 1 db low low low high low low 2 db low low high low low low 4 db low high low low low low 8 db high low low low low low 16 db high high high high high high 31.5 db any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. state bias condition low 0 to -3v @ 35 a typ. high vee to vee +0.8v @ 5 a typ. vee range= -5 vdc 10% vee (vdc) iee (typ.) (ma) iee (max.) (ma) -5 2 5 control voltage (v1 to v6) vee - 0.5 vdc bias voltage (vee) -7 vdc channel temperature 150 c thermal resistance 330 c/w storage temperature -65 to + 150 c operating temperature -55 to +85 c rf input power (0.5 - 13 ghz) +25 dbm electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate wp-8 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 03691215 step error (db) frequency (ghz) hmc424 v06.0809 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz
attenuators - digital - chip 1 1 - 11 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing 1. all dimensions are in inches (millimeters). 2. typical bond pad is .004 square. 3. typical bond pad spacing is .006 center to center except as noted. 4. backside metalization: gold 5. backside metal is ground 6. bond pad metalization: gold pad number function description interface schematic gnd die bottom must be connected to rf ground. 1, 3 rf1, rf2 this pad is dc coupled and matched to 50 ohm. blocking capacitors are required if rf line potential is not equal to 0v. 2 vee supply voltage -5v 10% 4, 5, 6, 7, 8, 9 v1 - v6 see truth table and control voltage table. pad descriptions hmc424 v06.0809 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz
attenuators - digital - chip 1 1 - 12 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com suggested driver circuit (one circuit required per bit control input) simple driver using inexpensive standard logic ics provides fast switching using minimum dc current. * recommended value to suppress unwanted rf signals at v1 - v6 control lines. assembly diagram hmc424 v06.0809 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz
attenuators - digital - chip 1 1 - 13 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc424 v06.0809 0.5db lsb gaas mmic 6-bit digital attenuator, dc - 13 ghz
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